參數(shù)資料
型號： IRGSL6B60K
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 絕緣柵雙極晶體管
文件頁數(shù)： 1/13頁
文件大?。?/td> 245K
代理商： IRGSL6B60K
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
1.4
–––
62
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Wt
www.irf.com
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
°C/W
g
Parameter
Max.
600
13
7.0
26
26
± 20
90
36
Units
V
A
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
8/18/04
Absolute Maximum Ratings
Benefits
Benchmark Efficiency for Motor Control.
1
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
Thermal Resistance
IRGB6B60K
IRGS6B60K
IRGSL6B60K
V
CES
= 600V
I
C
= 7.0A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.8V
D
2
Pak
IRGS6B60K
TO-220AB
IRGB6B60K
TO-262
IRGSL6B60K
E
C
G
n-channel
相關(guān)PDF資料
PDF描述
IRGBC40S INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=31A)
IRGBF20 INSULATED GATE BIPOLAR TRANSISTOR(Vce=900V, @Vge=15V, Ic=5.3A)
IRGBF20F Aluminum Polymer SMT Capacitor; Capacitance: 470uF; Voltage: 6.3V; Case Size: 10x10 mm; Packaging: Tape & Reel
IRGI4055PBF PDP TRENCH IGBT
IRGI4061DPBF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGSL6B60KD 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGSL6B60KDPBF 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGSL6B60KPBF 功能描述:IGBT N-CH 600V 13A TO-262 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應(yīng)商設(shè)備封裝:PLUS247?-3 包裝:管件
IRGSL8B60K 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
IRGSL8B60KPBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*