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參數(shù)資料
| 型號： | IRGPH50F |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A) |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d 1200伏，@和VGE \u003d 15V的，集成電路\u003d 25A條） |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 267K |
| 代理商： | IRGPH50F |
C-283
IRGPH50F
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0
1000
2000
3000
4000
5000
1
10
100
C
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
20
Q , Total Gate Charge (nC)
40
60
80
100
G
V
V = 400V
I = 25A
5.8
6.0
6.2
6.4
6.6
6.8
7.0
7.2
0
10
20
30
40
50
60
T
R , Gate Resistance ( )
W
V = 960V
V = 15V
T = 25°C
I = 25A
1
10
100
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120
140
160
T
R = 5
V = 15V
V = 960V
I = 50A
I = 25A
I = 13A
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