參數(shù)資料
型號: IRGPH40FD2
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)
中文描述: 絕緣柵雙極型晶體管,超快軟恢復(fù)(VCES和\u003d 1200伏,@和VGE \u003d 15V的,集成電路\u003d 17A條)
文件頁數(shù): 4/6頁
文件大?。?/td> 255K
代理商: IRGPH40FD2
C-276
Fig. 5
- Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4
- Maximum Collector Current vs.
Case Temperature
IRGPH40F
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
0
10
20
30
25
50
75
100
125
150
M
T , Case Temperature (°C)
V = 15V
2.0
3.0
4.0
5.0
-60
-40
-20
T , Case Tem perature (°C)
0
20
40
60
80
100 120 140 160
C
V
V = 15V
80μs PULSE WIDTH
I = 34A
I = 17A
I = 8.5A
0.01
0.00001
0.1
1
0.0001
0.001
t , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
t
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
T
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2
2. Peak T = P x Z + TC
Next Data Sheet
Index
Previous Datasheet
To Order
相關(guān)PDF資料
PDF描述
IRGPH40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=18A)
IRGPH40 INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A)
IRGPH40M INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=18A)
IRGPH50M INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A)
IRGPH50S Aluminum Electrolytic Radial Leaded Low Leakage Current Capacitor; Capacitance: 22uF; Voltage: 6.3V; Case Size: 4x7 mm; Packaging: Bulk
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGPH40K 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 103A I(C) | TO-247AC
IRGPH40KD2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
IRGPH40M 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=18A)
IRGPH40MD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours
IRGPH40S 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=20A)