參數(shù)資料
型號： IRGPH30MD2
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=9.0A)
中文描述： 絕緣柵雙極型晶體管，超快軟恢復（VCES和\u003d 1200伏，@和VGE \u003d 15V的，集成電路\u003d 9.0,9.0）
文件頁數(shù)： 2/2頁
文件大?。?/td> 86K
代理商： IRGPH30MD2
C-478
IRGPH30MD2
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
1200
—
—
—
—
3.1
—
4.9
—
3.6
3.0
—
—
-14
2.5
—
—
—
—
—
—
2.7
—
2.4
—
—
Conditions
—
—
3.5
—
—
5.5
—
—
250
2500
3.0
2.7
±100
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 9.0A
I
C
= 15A
I
C
= 9.0A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 9.0A
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
C
= 6.0A
I
C
= 6.0A, T
J
= 150°C
V
GE
= ±20V
V/°C
V
GE
= 15V
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
mV/°C
S
μA
V
FM
Diode Forward Voltage Drop
V
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Gate-to-Emitter Leakage Current
nA
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
25
—
—
—
—
—
2.3
—
10
—
200
—
210
—
—
—
—
—
4.0
10
—
Conditions
30
6.0
15
—
—
450
390
—
—
7.0
—
I
C
= 9.0A
V
CC
= 960V
nC
T
J
= 25°C
I
C
= 9.0A, V
CC
= 960V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
ns
mJ
μs
V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 23
, V
CPK
< 1000V
T
J
= 150°C,
I
C
= 9.0A, V
CC
= 960V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
33
20
480
450
8.0
13
670
50
10
53
87
4.4
5.0
116
233
180
100
—
—
—
—
—
—
—
—
—
80
130
8.0
9.0
320
585
—
—
ns
mJ
nH
pF
ns
I
F
= 6.0A
I
rr
Diode Peak Reverse Recovery Current
A
V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
nC
di/dt = 200A/μs
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
A/μs
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 23
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs,
single shot.
Notes:
Refer to Section D - page D-13 for
Package Outline 3
- JEDEC Outline TO-247AC
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