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參數(shù)資料
| 型號： | IRGPH20 |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
| 中文描述： | 絕緣柵雙極晶體管（VCES和\u003d 1200伏，@和VGE \u003d 15V的，集成電路\u003d 4.5A） |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 240K |
| 代理商： | IRGPH20 |
C-465
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGPH20M
0.1
1
10
100
1
10
C
I
V , Collector-to-Emitter Voltage (V)
T = 150°C
T = 25°C
V = 15V
20μs PULSE WIDTH
A
1
10
100
5
10
15
20
C
I
V , Gate-to-Emitter Voltage (V)
T = 25°C
T = 150°C
V = 100V
5μs PULSE WIDTH
A
0
3
6
9
12
0.1
1
10
100
f, Frequency (kHz)
L
A
60% of rated
voltage
Ideal diodes
Square w ave:
Triangular w ave:
Clamp voltage:
80% of rated
For both:
Duty cycle: 50%
TJ
Tsink
Gate drive as specified
Powe r Dissipa tion = 1 5W
To Order
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGPH30MD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=9.0A) |
| IRGPH40F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
| IRGPH40FD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A) |
| IRGPH40MD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=18A) |
| IRGPH40 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGPH20M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPH20S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=6.6A) |
| IRGPH30MD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPH30S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPH40 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
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