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參數(shù)資料
| 型號(hào)： | IRGPF30F |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（快速絕緣柵型雙極型晶體管） |
| 文件頁(yè)數(shù)： | 5/6頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | IRGPF30F |
C-259
IRGPF30F
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
0.98
1.00
1.02
1.04
1.06
1.08
1.10
20
25
30
35
40
45
50
55
T
R , Gate Resistance ( )
W
V = 720V
V = 15V
T = 25°C
I = 11A
0.1
1
10
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120 140
160
T
R = 22
V = 15V
V = 720V
I = 22A
I = 11A
I = 5.5A
0
200
400
600
800
1000
1
10
100
C
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
5
10
15
20
25
G
V
Q , Total Gate Charge (nC)
V = 400V
I = 11A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGPF40F | Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管) |
| IRGPH20 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
| IRGPH30MD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=9.0A) |
| IRGPH40F | INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A) |
| IRGPH40FD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGPF40F | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPF50 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| IRGPF50F | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGPH20 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=4.5A) |
| IRGPH20M | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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