參數資料
型號: IRGPC40MD2
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
文件頁數: 2/2頁
文件大?。?/td> 42K
代理商: IRGPC40MD2
C-398
IRGPC40MD2
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
0.70
2.0
2.6
2.4
3.0
-12
9.2
12
3500
1.3
1.2
±100
Conditions
3.0
5.5
250
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 24A
I
C
= 40A
I
C
= 24A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 24A
V
GE
= 0V, V
CE
= 600V
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
C
= 15A
I
C
= 15A, T
J
= 150°C
V
GE
= ±20V
V/°C
V
GE
= 15V
V
V
GE(th)
V
GE(th)
/
T
J
Temperature Coeff. of Threshold Voltage
g
fe
Forward Transconductance
I
CES
Zero Gate Voltage Collector Current
Gate Threshold Voltage
mV/°C
S
μA
V
FM
Diode Forward Voltage Drop
1.7
1.6
V
I
GES
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Gate-to-Emitter Leakage Current
nA
Min. Typ. Max. Units
59
8.6
25
26
37
240
230
0.75
1.65
2.4
10
Conditions
80
10
42
410
420
3.6
I
C
= 24A
V
CC
= 400V
nC
T
J
= 25°C
I
C
= 24A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail" and
diode reverse recovery.
ns
mJ
μs
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 10
, V
CPK
< 500V
T
J
= 150°C,
I
C
= 24A, V
CC
= 480V
V
GE
= 15V, R
G
= 10
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
28
37
380
460
4.5
13
1500
190
20
42
74
4.0
6.5
80
220
188
160
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 10
.
Pulse width
80μs; duty factor
0.1%.
60
120
6.0
10
180
600
ns
mJ
nH
pF
ns
I
F
= 15A
I
rr
Diode Peak Reverse Recovery Current
A
V
R
= 200V
Q
rr
Diode Reverse Recovery Charge
nC
di/dt = 200A/μs
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
Repetitive rating; V
GE
=20V, pulse width limited
by max. junction temperature.
Refer to Section D for the following:
Package Outline 3
- JEDEC Outline TO-247AC
A/μs
Notes:
Pulse width 5.0μs,
single shot.
Section D - page D-13
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