參數(shù)資料
型號(hào): IRGPC30K
廠商: International Rectifier
英文描述: Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
中文描述: 絕緣門雙極晶體管(IGBTs)(短路額定超快速絕緣柵型雙極型晶體管)
文件頁(yè)數(shù): 3/7頁(yè)
文件大小: 110K
代理商: IRGPC30K
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
IRGPC30K
0
10
20
30
40
0.1
1
10
100
f, Frequency (kHz)
L
A
60% of rated
voltage
Ideal diodes
Square wave:
Triangular wave:
Clamp voltage:
80% of rated
For both:
Duty cycle: 50%
J
sink
Gate drive as specified
Power Dissipation = 24W
0.1
1
10
100
0.1
1
10
V , Collector-to-Emitter Voltage (V)
C
I
T = 150°C
T = 25°C
V = 15V
20μs PULSE WIDTH
A
1
10
100
5
10
15
20
C
I
V , Gate-to-Emitter Voltage (V)
T = 25°C
T = 150°C
V = 100V
5μs PULSE WIDTH
A
相關(guān)PDF資料
PDF描述
IRGPC30MD2 Insulated Gate Bipolar Transistors (IGBTs) with Ultrafast Soft Recovery Diode(帶超快軟恢復(fù)二極管的絕緣柵雙極型晶體管)
IRGPC40F Insulated Gate Bipolar Transistors (IGBTs)(快速絕緣柵型雙極型晶體管)
IRGPC40MD2 Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
IRGPC40M Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
IRGPC40U Insulated Gate Bipolar Transistors (IGBTs)(超快速絕緣柵型雙極型晶體管)
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