- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384501 > IRGP30B60KD-E (International Rectifier) INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE PDF資料下載
參數(shù)資料
| 型號： | IRGP30B60KD-E |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 603K |
| 代理商： | IRGP30B60KD-E |
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low V
CE
(on)
Non Punch Through IGBT Technology.
Low Diode V
F
.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive V
CE (on)
Temperature Coefficient.
TO-247AD Package
10/14/02
www.irf.com
1
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
IRGP30B60KD-E
E
G
n-channel
C
V
CES
= 600V
I
C
= 30A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.95V
TO-247AD
Parameter
Max.
600
60
30
120
120
60
30
120
±20
304
122
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
A
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Absolute Maximum Ratings
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6.0
Max.
0.41
1.32
–––
40
–––
Units
R
θ
JC
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
g
°C/W
Thermal Resistance
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGP35B60PD | WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRGP4050 | PDP Switch |
| IRGP4055PBF | PDP TRENCH IGBT |
| IRGP4065DPBF | PDP TRENCH IGBT |
| IRGP4065PBF | PDP TRENCH IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGP30B60KD-EP | 功能描述:IGBT 晶體管 600V UltraFast 5-40kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRGP30B60KD-MP | 制造商:International Rectifier 功能描述:IGBT COPAK-247 - Rail/Tube 制造商:International Rectifier 功能描述:SEMICONDUCTOR OTHER 制造商:International Rectifier 功能描述:600V UltraFast 5-40kHz Copack IGBT |
| IRGP35B60PD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS IGBT |
| IRGP35B60PD_04 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS IGBT |
| IRGP35B60PD-EP | 功能描述:IGBT 晶體管 600V WARP2 150KHZ COPACK IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。