參數(shù)資料
型號: IRG4PH40S
英文描述: TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 20A I(C) | TO-247AC
中文描述: 晶體管| IGBT的|正陳| 1.2KV五(巴西)國際消費電子展|甲一(c)|至247AC
文件頁數(shù): 4/8頁
文件大?。?/td> 144K
代理商: IRG4PH40S
IRG4PC50S-P
4
www.irf.com
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4
- Maximum Collector Current vs. Case
Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
°
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
T , Junction Temperature ( C)
V
C
V = 15V
80 us PULSE WIDTH
I = A
20.5
I = A
41
I = A
82
0
20
40
60
80
25
50
75
100
125
150
M
T , Case Temperature (°C)
V = 15V
LIMITED BY PACKAG E
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T =P
x Z
+ T
2
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
t
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
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