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參數(shù)資料
| 型號： | IRG4PC60F-P |
| 英文描述： | 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC Solder Plate package |
| 中文描述： | 600V的快速1-8千赫分立式IGBT采用TO - 247AC焊盤封裝 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 144K |
| 代理商： | IRG4PC60F-P |
Parameter
Max.
600
70
41
140
140
± 20
20
200
78
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max Reflow Temperature
A
V
mJ
-55 to + 150
°C
225
IRG4PC50S-P
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Parameter
Typ.
–––
0.24
–––
Max.
0.64
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
°C/W
Thermal Resistance
Absolute Maximum Ratings
W
E
C
G
n-channel
Features
Standard: Optimized for minimum saturation
voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Surface Mountable
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
V
CES
= 600V
V
CE(on) typ.
=
1.28V
@V
GE
= 15V, I
C
= 41A
1
www.irf.com
05/14/02
Surface Mountable
TO-247
相關PDF資料 |
PDF描述 |
|---|---|
| IRG4PC60U-P | 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC Solder Plate package |
| IRG4PH40S | TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 20A I(C) | TO-247AC |
| IRG4RC10STR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA |
| IRG4RC10STRL | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA |
| IRG4RC10STRR | TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 8A I(C) | TO-252AA |
相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PC60FPBF | 功能描述:IGBT 晶體管 600V Fast 1-8kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4PC60F-PPBF | 制造商:International Rectifier 功能描述:Trans IGBT Chip N-CH 600V 90A 3-Pin(3+Tab) TO-247AC 制造商:International Rectifier 功能描述:IGBT 600V 90A TO-247AC |
| IRG4PC60U | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR |
| IRG4PC60U-P | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT |
| IRG4PC60UPBF | 功能描述:IGBT 晶體管 600V ULTRAFAST 8-60KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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