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參數資料
| 型號： | IRG4BH40SD |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時 |
| 文件頁數： | 7/35頁 |
| 文件大小： | 112K |
| 代理商： | IRG4BH40SD |
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The IGBT Structure
IR
G
4
B
C
4
0
S
D
Diode
International Rectifier
Speed Designator
S Standard
F Fast
M Short Cicuit Fast
U UltraFast
K Short Circuit UltraFast
IGBT
Generation
Modifier
Die Size
Voltage Designator
C 600v E 800v
F 900v G 1000v
H 1200v
Package Designator
B T0220
P T0247
Basic IGBT Structure
The silicon cross-section of an Insulated Gate Bipolar Transistor (IGBT), the
terminal called Collector is, actually, the Emitter of the PNP. In spite of its
similarity to the cross-section of a power MOSFET, operating of the two
transistors is fundamentally different, the IGBT being a minority carrier device.
Except for the P + substrate is virtually identical to that of a power MOSFET,
both devices share a similar polysilicon gate structure and P wells with N +
source contacts. In both devices the N-type material under the P wells is sized
in thickness and reistivity to sustain the full voltage rating of the device.
However, in spite of the many similarities, he physical operation of the IGBT is
closer to that of a bipolar transistor than to that of a power MOSFET. This is
due to the P + substrate which is responsible for the minority carrier injection
into the N regtion and the resulting conductivity modulation, a significant share
of the conduction losses occur in the N region, typically 70% in a 500v device.
The part number itself contains in coded form the key features of the IGBT. An
explanation of the nomenclature in contained below.
IGBT / CoPack
Quarterly Reliability Report
Page 7 of 35
相關PDF資料 |
PDF描述 |
|---|---|
| IRG4BH40UD | Fit Rate / Equivalent Device Hours |
| IRG4PC40MD | Fit Rate / Equivalent Device Hours |
| IRG4PC40SD | Fit Rate / Equivalent Device Hours |
| IRG4PC40UD2 | Fit Rate / Equivalent Device Hours |
| IRG4PE40KD | Fit Rate / Equivalent Device Hours |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRG4BH40UD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4C30W-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| IRG4CC10KB | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IRG4CC10KB IGBT Die in Wafer Form |
| IRG4CC10SB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| IRG4CC10UB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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