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參數(shù)資料
| 型號(hào)： | IRG4BH20K-S |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 絕緣柵雙極晶體管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 167K |
| 代理商： | IRG4BH20K-S |
V
CES
= 1200V
V
CE(on) typ.
= 3.17V
@V
GE
= 15V, I
C
= 5.0A
IRG4BH20K-L
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD -93961
E
C
G
n-channel
Features
High short circuit rating optimized for motor control,
t
sc
=10μs, V
CC
= 720V , T
J
= 125°C,
V
GE
= 15V
Combines low conduction losses with high
switching speed
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
Industry standard TO-262 package
Benefits
As a Freewheeling Diode we recommend our
HEXFRED
TM
ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBT's offer highest power
density motor controls possible
www.irf.com
1
8/17/00
Parameter
Typ.
–––
0.24
–––
6 (0.21)
Max.
2.1
–––
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g (oz)
Thermal Resistance
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
1200
11
5.0
22
22
10
±20
130
60
24
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
μs
V
mJ
-55 to +150
°C
Absolute Maximum Ratings
W
TO-262
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| IRG4IBC20KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20KD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20FDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4IBC20FD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BH20K-SPBF | 功能描述:IGBT 晶體管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BH20K-SPBF | 制造商:International Rectifier 功能描述:IGBT TRANSISTOR PACKAGE/CASE:D2-PAK |
| IRG4BH20K-STRLP | 功能描述:IGBT 模塊 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| IRG4BH40FD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4BH40KD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
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