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參數(shù)資料
| 型號： | IRG4BC40KD |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時 |
| 文件頁數(shù)： | 26/35頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IRG4BC40KD |
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TEMPERATURE & HUMIDITY (THB)
Test circuit
Conditions
Bias:
Vce = 100% of maximum rated
V
up to 500V: 500V for
all devices with rated
V
(BR)CES
greater than 500V *
85°C
85%
2000 Hours nominal
168, 500, 1000,
1500, 2000 Hours nominal.
DUT
DC
BIAS
Temperature:
Relative Humidity:
Duration:
Test points:
* Devices manufactured since week
code 9640 the applied bias:
V
(BR)CES
=
Vmax or 100v which ever the lesser
D
= Diode for CoPack devices only
Purpose
Failure Modes
Sensitive Parameters
V
(BR)CES,
V
CE(on)
Temperature and Humidity bias testing for non-hermetic packages is to subject the
devices to extremes of temperature and humidity to examine the ability of the
package to withstand the deleterious effect of the humid environment.
D
There are two primary failure modes which have been observed. The first failure
mode comes about as a result of the ingression of water molecules into the active
area on the surface of the die. Once sufficient water has accumulated in the region
of the electric field termination structure on the die, the perturbation of that field
begins to degrade the breakdown characteristics of the device.
The second failure mode that has been observed is due to cathodic corrosion of the
aluminum emitter bonding pad. As with first failure mode, water will ingress to the top
of the die. There, in the presence of applied bias, an electric current through the few
monolayers of water will begin to cause the bond pad to dissolve. Eventually. the
corrosion will proceed to the point where the current capability of the device is
increased and become unstable.
The dominance of either of these failure modes is basically determined by the
amount of bias present during test.
Under low bias conditions, the corrosion
proceeds slowly, so the first failure mode will proceed very rapidly and the device will
fail due to on-resistance before the breakdown characteristics can degrade.
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| IRG4BE40KD | Fit Rate / Equivalent Device Hours |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BC40KPBF | 功能描述:IGBT 晶體管 600V ULTRAFAST 8-25KHZ DSCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC40MD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4BC40S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.32V, @Vge=15V, Ic=31A) |
| IRG4BC40SD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4BC40SPBF | 功能描述:IGBT 晶體管 600V DC-1 KHZ (STD) DISCRETE IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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