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參數(shù)資料
| 型號： | IRG4BC20MDS |
| 廠商： | International Rectifier |
| 英文描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) |
| 中文描述： | 絕緣柵雙極型晶體管，超快軟恢復二極管（VCES和\u003d 600V電壓的Vce（on）典型.\u003d 1.85V，@和VGE \u003d 15V的，集成電路\u003d 11A條） |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 222K |
| 代理商： | IRG4BC20MDS |
IRG4BC20FD
10
www.irf.com
Repetitive rating: V
GE
=20V; pulse width limited by maximum junction temperature (figure 20)
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH, R
G
= 50
(figure 19)
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
!
0.55 (.022)
0.46 (.018)
3 X
2.92 (.115)
2.64 (.104)
1.32 (.052)
1.22 (.048)
- B -
4.69 (.185)
4.20 (.165)
3.78 (.149)
3.54 (.139)
- A -
6.47 (.255)
6.10 (.240)
1.15 (.045)
MIN
4.06 (.160)
3.55 (.140)
3 X
3.96 (.160)
3.55 (.140)
3 X
0.93 (.037)
0.69 (.027)
0.36 (.014) M B A M
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
3 X
2.54 (.100)
2X
1 2 3
4
CONFORMS TO JEDEC OUTLINE TO-220AB
Dimensions in Millimeters and (Inches)
LEAD ASSIGNMENTS
1 - GATE
2 - COLLE CTOR
3 - EMITTER
4 - COLLE CTOR
NOTES:
1 DIMENSIONS & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTR OLLIN G DIMENSION : INCH.
3 DIMENSIONS ARE SHOW N
MILLIMETER S (IN CHES ).
4 CONFORMS TO JEDEC OU TLINE
TO-220AB.
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Data and specifications subject to change without notice. 7/00
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRG4BC20SD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
| IRG4BC20SDS | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=10A) |
| IRG4BC20UD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A) |
| IRG4BC20W-S | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
| IRG4BC20WS | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4BC20MD-S | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4BC20MDS_07 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| IRG4BC20MD-SPBF | 功能描述:IGBT 晶體管 600V Fast 1-8kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IRG4BC20MD-STRL | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB |
| IRG4BC20MD-STRR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB |
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