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參數(shù)資料
| 型號： | IRFZ44ZS |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 13.9mohm，身份證\u003d 51A條） |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 333K |
| 代理商： | IRFZ44ZS |
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L =0.18mH,
R
G
= 25
, I
AS
= 31A, V
GS
=10V. Part not
recommended for use above this value.
I
SD
≤
31A, di/dt
≤
840A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is rated at T
J
of approximately 90°C.
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient –––
R
DS(on)
Static Drain-to-Source On-Resistance –––
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
55
Typ. Max. Units
–––
–––
0.054
–––
11.1
13.9
–––
4.0
–––
–––
–––
20
–––
250
–––
200
–––
-200
29
43
7.2
11
12
18
14
–––
68
–––
33
–––
41
–––
4.5
–––
V
V/°C
m
V
S
μA
2.0
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
nH
Between lead,
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
1420
240
130
830
190
300
–––
–––
–––
–––
–––
–––
pF
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
–––
Typ. Max. Units
–––
51
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
200
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
23
17
1.2
35
26
V
ns
nC
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 31A
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 44V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
V
GS
= 10V
MOSFET symbol
Conditions
T
J
= 25°C, I
F
= 31A, V
DD
= 28V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 31A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 25V, I
D
= 31A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
R
G
= 15
I
D
= 31A
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 31A
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