參數(shù)資料
型號(hào)： IRFY430M-T257
英文描述： N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N溝道功率MOS場效應(yīng)管,HI-REL應(yīng)用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
中文描述： N溝道功率MOSFET為高可靠性應(yīng)用（減振鋼板基本：500V電壓，身份證（續(xù)）：4.5A時(shí)，RDS（上）：1.65Ω）（不適用馬鞍山溝道功率場效應(yīng)管，高可靠性應(yīng)用（減振鋼板基本：500V電壓，編號(hào)（續(xù)）：4.5A時(shí)，RDS（上）：1.65Ω））
文件頁數(shù)： 2/2頁
文件大?。?/td> 20K
代理商： IRFY430M-T257
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
IRFY430M-T257
Prelim. 1/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
GS
= 0
Reference to 25
°
C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 2.4A
I
D
= 3.7A
I
D
= 250
m
A
I
DS
= 2.4A
V
DS
= 0.8BV
DSS
T
J
= 125
°
C
V
GS
= 20V
V
GS
=
–
20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
V
GS
= 10V
V
DS
= 0.5BV
DSS
V
DD
= 250V
I
D
=3.7A
R
G
= 7.5
W
V
GS
= 10V
I
D
=3.7A
I
D
= 3.7A
I
S
= 3.7A
V
GS
= 0
I
S
= 3.7A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
C
= 25
°
C
T
J
= 25
°
C
ELECTRICAL CHARACTERISTICS
(Tamb= 25
°
C unless otherwise stated)
V
V/
°
C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
Drain
–
Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain
–
Source On
–
State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
–
Source Leakage
Reverse Gate
–
Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate
–
Source Charge
1
Gate
–
Drain (
“
Miller
”
) Charge
1
Turn
–
On Delay Time
Rise Time
Turn
–
Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn
–
On Time
500
0.78
1.65
1.84
4
2
1.5
25
250
100
–
100
610
135
65
19.8
29.5
2.2
5.5
4.6
19.7
35
30
55
30
3.7
14
1.4
900
7.0
Negligible
8.7
8.7
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) Repetitive Rating
–
Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
Internal Drain Inductance
(6mm down drain lead to centre of die)
Internal Source Inductance
(6mm down source lead to centre of source bond pad)
PACKAGE CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IRFY440C 制造商:International Rectifier 功能描述: 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 7A 3PIN TO-257 - Bulk
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