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參數(shù)資料
| 型號： | IRFWI530A |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Advanced Power MOSFET |
| 中文描述： | 先進(jìn)的功率MOSFET |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 259K |
| 代理商： | IRFWI530A |
N-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/ T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250 A
I
D
=250 A
See Fig 7
V
DS
=5V,I
D
=250 A
V
GS
=20V
V
GS
=-20V
V
DS
=100V
V
DS
=80V,T
C
=150
V
GS
=10V,I
D
=7A
V
DS
=40V,I
D
=7A
V
DD
=50V,I
D
=14A,
R
G
=12
See Fig 13
V
DS
=80V,V
GS
=10V,
I
D
=14A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
μ
Integral reverse pn-diode
in the MOSFET
T
J
=25
,I
S
=14A,V
GS
=0V
T
J
=25
,I
F
=14A
di
F
/dt=100A/
s
Ο
C
O
4
O
5
Ο
C
Ο
C
O
4
O
4
O
4
O
4
O
1
Ο
C
μ
Ο
C
O
5
O
4
μ
IRFW/I530A
100
--
2.0
--
--
--
--
--
0.11
--
--
--
--
--
150
62
13
14
55
36
27
4.5
12.8
--
--
4.0
100
-100
10
100
0.11
--
790
175
72
40
40
110
80
36
--
--
10.25
610
--
--
--
109
0.41
14
56
1.5
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=2mH, I
AS
=14A, V
DD
=25V, R
G
=27
I
SD
14A, di/dt
35
0A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
, Starting T
J
=25
<
O
1
O
O
3
O
2
4
o
C
o
C
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| IRFWI540A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFWI550A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFWI740A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET |
| IRFWZ10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 10A I(D) | TO-252VAR |
| IRFWZ14 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | TO-252VAR |
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