參數(shù)資料
型號(hào): IRFU420APBF
廠商: International Rectifier
英文描述: HEXFET Power MOSFET ( VDSS = 500V , RDS(on) max = 3.0ヘ , ID = 3.3A )
中文描述: HEXFET功率MOSFET(減振鋼板基本\u003d 500V及的RDS(on)最大值\u003d 3.0ヘ,身份證\u003d 3.3A)
文件頁(yè)數(shù): 4/10頁(yè)
文件大小: 235K
代理商: IRFU420APBF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
°
T = 150 C
0.1
1
10
100
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25 C
°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
0
4
8
12
16
0
5
10
15
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
2.5A
V
= 100V
DS
V
= 250V
DS
V
= 400V
DS
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
10000
C
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
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