參數(shù)資料
型號(hào)： IRFU3504
廠商： International Rectifier
英文描述： AUTOMOTIVE MOSFET
中文描述： 汽車MOSFET的
文件頁(yè)數(shù)： 1/11頁(yè)
文件大小： 593K
代理商： IRFU3504
IRFR3504
IRFU3504
HEXFET
Power MOSFET
Absolute Maximum Ratings
Parameter
Typ.
–––
–––
–––
Max.
1.09
50
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
= 40V
R
DS(on)
= 9.2m
I
D
= 30A
www.irf.com
1
AUTOMOTIVE MOSFET
HEXFET(R) is a registered trademark of International Rectifier.
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Addi-
tional features of this product are a 175°C junction operating
temperature, fast switching speed and improved repetitive
avalanche rating. These features combine to make this design
an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
●
●
●
●
●
D-Pak
IRFR3504
I-Pak
IRFU3504
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
Continuous Drain Current, V
GS
@ 10V (Package limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
87
61
30
350
140
0.92
± 20
240
480
A
W
W/°C
V
mJ
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
See Fig.12a, 12b, 15, 16
A
mJ
-55 to + 175
300 (1.6mm from case )
°C
PD - 94499A
相關(guān)PDF資料
PDF描述
IRFR3504PbF AUTOMOTIVE MOSFET
IRFR3706TR TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 75A I(D) | TO-252AA
IRFU3706 Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A)
IRFR3706 Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A)
IRFR3706TRL TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 75A I(D) | TO-252AA
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFU3504PBF 功能描述:MOSFET MOSFT 40V 87A 9.2mOhm 71nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU3504Z 功能描述:MOSFET N-CH 40V 42A I-PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
IRFU3504ZPBF 功能描述:MOSFET MOSFT 40V 77A 9mOhm 30nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU3505 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET
IRFU3505PBF 功能描述:MOSFET N-CH 55V 30A I-PAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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