- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377510 > IRFU2307Z (International Rectifier) AUTOMOTIVE MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRFU2307Z |
| 廠商： | International Rectifier |
| 英文描述： | AUTOMOTIVE MOSFET |
| 中文描述： | 汽車MOSFET的 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 300K |
| 代理商： | IRFU2307Z |
2
www.irf.com
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Min.
75
–––
–––
2.0
30
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.072
–––
12.8
16
–––
4.0
–––
–––
–––
25
–––
250
–––
200
–––
-200
50
75
14
–––
19
–––
16
–––
65
–––
44
–––
29
–––
4.5
–––
V
V/°C
m
V
S
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
ns
Between lead,
nH
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 60V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Source-Drain Ratings and Characteristics
Parameter
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2190
280
150
1070
190
400
–––
–––
–––
–––
–––
–––
pF
Min.
–––
Typ. Max. Units
–––
42
A
–––
–––
210
–––
–––
–––
–––
31
31
1.3
47
47
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 10V
V
DD
= 38V
I
D
= 32A
R
G
= 10
V
GS
= 10V
T
J
= 25°C, I
S
= 32A, V
GS
= 0V
T
J
= 25°C, I
F
= 32A, V
DD
= 38V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 32A
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 25V, I
D
= 32A
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 32A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
V
DS
= 60V
相關PDF資料 |
PDF描述 |
|---|---|
| IRFR2605 | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A) |
| IRFU2605 | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A) |
| IRFR2905 | AUTOMOTIVE MOSFET |
| IRFU2905Z | AUTOMOTIVE MOSFET |
| IRFR2905Z | AUTOMOTIVE MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRFU2307ZPBF | 功能描述:MOSFET MOSFT 75V 53A 16mOhm 50nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU230A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7.5A I(D) | TO-251AA |
| IRFU230B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| IRFU230BTLTU_FP001 | 功能描述:MOSFET 200V N-Ch B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU230BTU | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。