參數(shù)資料
型號(hào)： IRFTF180-12HK
廠商： International Rectifier
英文描述： FAST THYRISTOR/ DIODE and MAGN-A-pak Power Modules THYRISTOR/ THYRISTOR
中文描述： 快速晶閘管/二極管和磁共振-甲柏電源模塊晶閘管/晶閘管
文件頁數(shù)： 2/8頁
文件大小： 238K
代理商： IRFTF180-12HK
IRK.F180.. Series
2
Bulletin
I27100
rev.
C
0
3
/
01
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
RRM
/V
DRM
, maximum repetitive
peak reverse voltage
V
V
RSM
, maximum non-
repetitive peak rev. voltage
V
I
RRM
/I
DRM
max.
@ T
J
= 125°C
mA
Type number
08
800
800
12
1200
1200
I
T(AV)
Maximum average on-state current
@ Case temperature
180
85
A
°C
180° conduction, half sine wave
I
T(RMS)
I
TSM
Maximum RMS current
400
A
as AC switch
Maximum peak, one-cycle,
7130
A
t = 10ms
No voltage
non-repetitive surge current
7470
t = 8.3ms
reapplied
6000
t = 10ms
100% V
RRM
reapplied
6280
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
255
KA
2
s
t = 10ms
No voltage
Initial T
J
= 125°C
232
t = 8.3ms
reapplied
180
t = 10ms
100% V
RRM
reapplied
164
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
2550
KA
2
√
s
t = 0 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold voltage
V
T(TO)2
High level value of threshold voltage
1.30
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
(I >
π
x I
T(AV)
), T
J
= T
J
max.
1.38
r
t1
Low level value of on-state slope resistance
0.90
mW
r
t2
High level value of on-state slope resistance
0.71
V
TM
Maximum on-state voltage drop
1.84
V
I
pk
= 600A, T
J
= T
J
max., t
p
= 10ms sine pulse
I
H
Maximum holding current
600
mA
T
J
= 25°C, I
T
> 30 A
T
J
= 25°C, V
A
= 12V, Ra = 6
, Ig
= 1A
I
L
Typical latching current
1000
mA
Parameter
IRK.F180..
Units Conditions
On-state Conduction
Frequency f
Units
50Hz
400Hz
370
435
530
650
565
670
800
1000
2400
1540
3150
2050
A
A
2500Hz
290
430
490
720
610
830
A
5000Hz
240
345
390
540
390
540
A
10000Hz
170
270
290
390
-
-
A
Recovery voltage Vr
50
50
50
50
50
50
V
Voltage before turn-on Vd
80% V
DRM
80% V
DRM
80% V
DRM
-
V
Rise of on-state current di/dt
50
50
-
-
-
A/
μ
s
Case temperature
85
60
85
60
85
60
°C
Equivalent values for RC circuit
10
/0.47
μ
F
10
/0.47
μ
F
10
/0.47
μ
F
I
TM
I
TM
180
o
el
100μs
I
TM
180
o
el
Current Carrying Capacity
IRK.F180-
50
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參數(shù)描述
IRFTS8342PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:Industry-Standard TSOP-6 Package
IRFTS8342TRPBF 功能描述:MOSFET 30V 8.2A 19mOhm 4.8 Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFTS8342TRPBF 制造商:International Rectifier 功能描述:MOSFET N CH HEXFET 30V 8.2A TSOP-6 制造商:International Rectifier 功能描述:MOSFET, N CH, HEXFET, 30V, 8.2A, TSOP-6
IRFTS9342PBF 制造商:IRF 制造商全稱:International Rectifier 功能描述:Industry-Standard TSOP-6 Package
IRFTS9342TRPBF 功能描述:MOSFET P-CHANNEL -30V -5.8A 40 mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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