參數(shù)資料
型號(hào): IRFSZ44A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類(lèi): JFETs
英文描述: N-Channel Power MOSFET(60V,0.024Ω,30A)(N溝道功率MOS場(chǎng)效應(yīng)管(漏源電壓60V,導(dǎo)通電阻0.024Ω,漏電流30A))
中文描述: 30 A, 60 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-220F, 3 PIN
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 266K
代理商: IRFSZ44A
N-C HANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
IRFSZ44A
10
-1
10
0
10
1
10
0
10
1
10
2
@ Notes :
1. 250
μ
s Pulse Test
2. T
C
= 25
o
C
V
GS
Top : 1 5 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
I
D
V
DS
, Drain-Source Voltage [V]
0
40
80
120
160
200
240
0.00
0.01
0.02
0.03
0.04
@ Note : T
J
= 25
o
C
V
GS
= 20 V
V
GS
= 10 V
R
D
]
D
I
D
, Drain Current [A]
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
V
SD
, Source-Drain Voltage [V]
10
0
10
1
10
2
175
o
C
25
o
C
@ Notes :
1. V
GS
= 0 V
2. 250
μ
s Pulse Test
I
D
10
0
10
1
0
700
1400
2100
2800
3500
C
iss
= C
gs
+ C
gd
(C
ds
= shorted )
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
C
V
DS
, Drain-Source Voltage [V]
0
10
20
30
40
50
60
70
0
5
10
V
DS
= 48 V
V
DS
= 30 V
V
DS
= 12 V
@ Notes : I
D
= 50.0 A
V
G
Q
G
, Total Gate Charge [nC]
2
4
6
8
10
10
-1
10
0
10
1
10
2
25
o
C
175
o
C
- 55
o
C
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 30 V
3. 250
μ
s Pulse Test
I
D
V
GS
, Gate-Source Voltage [V]
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