參數(shù)資料
型號(hào)： IRFS720B
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： CONN.25X2.MALE,TERM,STRIP
中文描述： 3.3 A, 400 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-220F, 3 PIN
文件頁(yè)數(shù)： 2/10頁(yè)
文件大?。?/td> 879K
代理商： IRFS720B
Rev. A, November 2001
I
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 39mH, I
= 3.3A, V
DD
= 50V, R
G
= 25
,
Starting T
= 25°C
3. I
≤
3.3A, di/dt
≤
300A/
μ
s, V
DD
≤
BV
Starting T
J
= 25°C
4. Pulse Test : Pulse width
≤
300
μ
s, Duty cycle
≤
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
/
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250
μ
A
400
--
--
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25°C
--
0.4
--
V/°C
V
DS
= 400 V, V
GS
= 0 V
V
DS
= 320 V, T
C
= 125°C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
--
--
--
--
--
--
--
--
10
100
100
-100
μ
A
μ
A
nA
nA
I
GSSF
I
GSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain-Source
On-Resistance
g
FS
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
--
4.0
V
V
GS
= 10 V, I
D
= 1.65 A
--
1.4
1.75
V
DS
= 40 V, I
D
= 1.65 A
--
2.8
--
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
460
55
11
600
72
15
pF
pF
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
t
r
Turn-On Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Turn-Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate-Source Charge
Q
gd
Gate-Drain Charge
V
DD
= 200 V, I
D
= 3.3 A,
R
G
= 25
--
--
--
--
--
--
--
10
35
35
35
14
2.7
5.6
30
80
80
80
18
--
--
ns
ns
ns
ns
nC
nC
nC
V
DS
= 320 V, I
D
= 3.3 A,
V
GS
= 10 V
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
V
SD
Drain-Source Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
--
--
--
--
--
--
--
--
3.3
13.2
1.5
--
--
A
A
V
ns
μ
C
V
GS
= 0 V, I
S
= 3.3 A
V
GS
= 0 V, I
S
= 3.3 A,
dI
F
/ dt = 100 A/
μ
s
220
1.36
相關(guān)PDF資料
PDF描述
IRF721 N-Channel Power MOSFETs, 3.0 A, 350-400 V
IRF721 N-CHANNEL POWER MOSFETS
IRF320 N-CHANNEL POWER MOSFETS
IRF321 N-CHANNEL POWER MOSFETS
IRF322 N-CHANNEL POWER MOSFETS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFS720BYDTU 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS721 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-220VAR
IRFS722 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-220VAR
IRFS723 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2A I(D) | TO-220VAR
IRFS730 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.5A I(D) | TO-220VAR
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*