參數(shù)資料
型號： IRFS4310ZPBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 1/11頁
文件大?。?/td> 437K
代理商： IRFS4310ZPBF
4/27/07
www.irf.com
1
HEXFET Power MOSFET
Benefits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
IRFB4310ZPbF
IRFS4310ZPbF
IRFSL4310ZPbF
D
2
Pak
IRFS4310ZPbF
TO-220AB
IRFB4310ZPbF
TO-262
IRFSL4310ZPbF
S
D
G
S
D
G
S
D
G
D
D
D
G
D
S
Gate
Drain
Source
S
D
G
V
DSS
R
DS(on)
typ.
max.
I
D
(Silicon Limited)
I
D
(Package Limited)
100V
4.8m
6.0m
127A
75A
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
Parameter
Units
A
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
R
θ
JC
Junction-to-Case
R
θ
CS
Case-to-Sink, Flat Greased Surface , TO-220
R
θ
JA
Junction-to-Ambient, TO-220
R
θ
JA
Junction-to-Ambient (PCB Mount) , D
2
Pak
W
W/°C
V
V
GS
dv/dt
T
J
T
STG
V/ns
°C
mJ
A
mJ
Typ.
–––
0.50
–––
–––
Max.
0.6
–––
62
40
Units
°C/W
130
See Fig. 14, 15, 22a, 22b,
250
1.7
18
-55 to + 175
± 20
10lb in (1.1N m)
300
Max.
127
90
75
560
相關(guān)PDF資料
PDF描述
IRFSL4310ZPBF HEXFET Power MOSFET
IRFS4410ZPBF HEXFET Power MOSFET
IRFSL4410ZPBF HEXFET Power MOSFET
IRFS9N60APBF SMPS MOSFET
IRFS9N60A SMPS MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFS4310ZTRLPBF 功能描述:MOSFET MOSFT 100V 127A 6mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4321PBF 功能描述:MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4321TRL7PP 制造商:International Rectifier 功能描述:MOSFET, 150V, 85A, 15 MOHM, 71 NC QG, D2PAK-7 - Tape and Reel 制造商:International Rectifier 功能描述:MOSFET N-CH 150V 86A D2PAK 制造商:International Rectifier 功能描述:T&R / MOSFET, 150V, 85A, 15 mOhm, 71 nC Qg, D2PAK-7
IRFS4321TRLPBF 功能描述:MOSFET MOSFT 100V 96A 10mOhm 120nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4321TRRPBF 功能描述:MOSFET 150V 1 N-CH HEXFET 15mOhms 71nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*