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參數(shù)資料
| 型號： | IRFS4310 |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 383K |
| 代理商： | IRFS4310 |
www.irf.com
5
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
T
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14.
Typical Avalanche Current vs.Pulsewidth
Fig 15.
Maximum Avalanche Energy vs. Temperature
Ri (°C/W)
τ
i (sec)
0.1962 0.00117
0.2542 0.016569
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci i
/
Ri
Ci=
i
/
Ri
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = T/ Z
thJC
I
av
=
2 T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
1
10
100
1000
A
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs
avalanche
pulsewidth,
assuming
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
tav
0.01
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
EA
TOP Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
相關(guān)PDF資料 |
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|---|---|
| IRFB4310 | HEXFET Power MOSFET |
| IRFSL4310 | HEXFET Power MOSFET |
| IRFS4610 | IRFB4610 IRFS4610 IRFSL4610 |
| IRFB4610 | IRFB4610 IRFS4610 IRFSL4610 |
| IRFSL4610 | IRFB4610 IRFS4610 IRFSL4610 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS4310HR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 140A 3PIN D2PAK - Rail/Tube 制造商:International Rectifier 功能描述:100V SINGLE N-CHANNEL HEXFET POWERMOSFET |
| IRFS4310PBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 7mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS4310TRLHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK T/R 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 140A 3PIN D2PAK - Tape and Reel |
| IRFS4310TRLPBF | 功能描述:MOSFET MOSFT 100V 140A 7mOhm 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS4310TRRPBF | 功能描述:MOSFET 100V 1 N-CH HEXFET 7mOhms 170nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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