參數(shù)資料
型號: IRFS31N20DTRR
廠商: International Rectifier
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB
中文描述: 晶體管| MOSFET的| N溝道| 200伏五(巴西)直|第31A條(丁)|對263AB
文件頁數(shù): 1/11頁
文件大?。?/td> 190K
代理商: IRFS31N20DTRR
Parameter
Max.
31
21
124
3.1
200
1.3
± 30
2.1
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
10 lbfin (1.1Nm)
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
°C
www.irf.com
1
2/14/00
IRFB31N20D
IRFS31N20D
IRFSL31N20D
SMPS MOSFET
HEXFET
Power MOSFET
R
DS(on)
max
0.082
l
High frequency DC-DC converters
Benefits
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Applications
V
DSS
200V
I
D
31A
Typical SMPS Topologies
l
Telecom 48V Input Forward Converters
Absolute Maximum Ratings
Notes
through
are on page 11
D
2
Pak
IRFS31N20D
TO-220AB
IRFB31N20D
TO-262
IRFSL31N20D
PD- 93805B
相關(guān)PDF資料
PDF描述
IRFB31N20D Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)
IRFS31N20D Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)
IRFSL31N20D Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A)
IRFS3207ZPbF HEXFET Power MOSFET
IRFSL3207ZPbF HEXFET Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFS31N20DTRRP 功能描述:MOSFET 200V SINGLE N-CH 82mOhms 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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