參數(shù)資料
型號： IRFR3709ZPBF
廠商： International Rectifier
英文描述： LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 159; Grade: -3; Package: Lead-Free ftBGA; Pins: 256; Temp.: AUTO
中文描述： HEXFET功率MOSFET（減振鋼板基本\u003d 30V的，的RDS（on）最大值\u003d 650萬ヘ，Qg和\u003d 17nC）
文件頁數(shù)： 2/12頁
文件大?。?/td> 274K
代理商： IRFR3709ZPBF
2
www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
Drain-to-Source Breakdown Voltage
Β
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
Min.
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
51
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
22
–––
5.2
6.5
6.5
8.2
1.80
2.25
-5.6
–––
–––
1.0
–––
150
–––
100
–––
-100
–––
–––
17
26
4.7
–––
1.6
–––
5.7
–––
5.0
–––
7.3
–––
10
–––
12
–––
12
–––
15
–––
3.9
–––
2330
–––
460
–––
230
–––
V
mV/°C
m
V
GS(th)
V
GS(th)
/
T
J
I
DSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
V
mV/°C
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Avalanche Characteristics
nA
gfs
Q
g
S
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
See Fig. 16
nC
ns
pF
Parameter
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
–––
Typ. Max. Units
–––
86
(Body Diode)
Pulsed Source Current
A
I
SM
–––
–––
340
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
29
25
1.0
44
37
V
ns
nC
MOSFET symbol
V
GS
= 4.5V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250μA
–––
V
GS
= 4.5V
I
D
= 12A
Typ.
–––
–––
V
GS
= 0V
V
DS
= 15V
= 1.0MHz
T
J
= 25°C, I
F
= 12A, V
DD
= 15V
di/dt = 100A/μs
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
Clamped Inductive Load
V
DS
= 15V, I
D
= 12A
V
DS
= 16V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 12A
V
DS
= 15V
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 15A
Conditions
7.9
Max.
100
12
相關PDF資料
PDF描述
IRFU3709ZPBF LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 1200; Supply Voltage: 1.2V; I/Os: 73; Grade: -3; Package: Lead-Free TQFP; Pins: 100; Temp.: AUTO
IRFR3710Z Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resi
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相關代理商/技術參數(shù)
參數(shù)描述
IRFR3709ZPBF 制造商:International Rectifier 功能描述:MOSFET
IRFR3709ZTR 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 30V, 86A, D-PAK, Transistor Polarity:N Channel, Continuous Dra
IRFR3709ZTRLPBF 功能描述:MOSFET MOSFT 30V 86A 6.5mOhm 17nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR3709ZTRPBF 功能描述:MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR3709ZTRR 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:High Frequency Synchronous Buck Converters for Computer Processor Power
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