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參數(shù)資料
| 型號： | IRFPS3815 |
| 廠商： | International Rectifier |
| 英文描述： | STRAIN RELIEF, 1/4" JACK, WHITE; For use with:C-Series Plugs; Colour:White; Connector type:Backshell RoHS Compliant: Yes |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 150伏，的Rds（on）\u003d 0.015ohm，身份證\u003d 105A及） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 101K |
| 代理商： | IRFPS3815 |
IRFPS3815
HEXFET
Power MOSFET
The HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
a wide variety of applications.
S
D
G
V
DSS
= 150V
R
DS(on)
= 0.015
I
D
= 105A
Description
3/14/01
www.irf.com
1
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175
°
C Operating Temperature
Fast Switching
Fully Avalanche Rated
Super
-
247
Parameter
Max.
105
74
390
441
2.9
± 30
1610
58
38
3.0
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/
°
C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
Absolute Maximum Ratings
Parameter
Typ.
–––
0.24
–––
Max.
0.34
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
PD - 93911
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| IRFPS3815PBF | 功能描述:MOSFET 150V 1 N-CH HEXFET 15mOhms 260nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS3815PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFPS38N60L | 功能描述:MOSFET N-Chan 600V 38 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS38N60LPBF | 功能描述:MOSFET N-Chan 600V 38 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFPS40N50L | 功能描述:MOSFET N-Chan 500V 46 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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