參數(shù)資料
型號： IRFPC60LC-P
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 16A I(D) | TO-247AC
中文描述： 晶體管| MOSFET的| N溝道| 600V的五（巴西）直| 16A條（丁）|對247AC
文件頁數(shù)： 1/8頁
文件大?。?/td> 107K
代理商： IRFPC60LC-P
IRFPC60LC-P
HEXFET
Power MOSFET
PD - 99438
S
D
G
V
DSS
= 600V
R
DS(on)
= 0.40
I
D
= 16A
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V V
gs
Rating
Reduced C
iss
, C
oss
, C
rss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
Repetitive Avalanche Rated
Absolute Maximum Ratings
Parameter
Max.
16
10
64
280
2.2
±30
1000
16
28
3.0
Units
I
D
@ T
C
= 25
°
C
I
D
@ T
C
= 100
°
C
I
DM
P
D
@T
C
= 25
°
C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Max Reflow Temperature
A
W
W/
°
C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
°
C
225
Parameter
Min.
––––
––––
––––
Typ.
––––
0.24
––––
Max.
0.45
––––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°
C/W
Thermal Resistance
Description
This new series of Surface Mountable Low Charge HEXFET Power MOSFETs
achieve significantly lower gate charge over conventional MOSFETs. Utilizing
advanced Hexfet technology the device improvements allow for reduced gate
drive requirements, faster switching speeds and increased total system savings.
These device improvements combined with the proven ruggedness and reliability
of HEXFETs offer the designer a new standard in power transistors for switching
applications.
1
04/25/02
Surface Mountable
TO-247
相關(guān)PDF資料
PDF描述
IRFPC42 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.9A I(D) | TO-247AC
IRFPE32 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.4A I(D) | TO-247AC
IRFPE42 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4.8A I(D) | TO-247AC
IRFPE52 TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7.2A I(D) | TO-247AC
IRFPF20 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 1.9A I(D) | TO-247AC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFPC60LCPBF 功能描述:MOSFET N-Chan 600V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFPC60LCPBF 制造商:International Rectifier 功能描述:MOSFET
IRFPC60PBF 功能描述:MOSFET N-Chan 600V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFPE20 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2.2A I(D) | TO-247AC
IRFPE22 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 2A I(D) | TO-247AC
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