參數(shù)資料
型號(hào): IRFP9150
廠商: HARRIS SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: 25A, 100V, 0.150 Ohm, P-Channel Power MOSFET
中文描述: 25 A, 100 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù): 5/7頁(yè)
文件大?。?/td> 59K
代理商: IRFP9150
4-67
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
0.75
0.85
0.95
1.05
1.15
1.25
N
-40
0
T
J
, JUNCTION TEMPERATURE (
o
C)
40
80
120
160
I
D
= 250
μ
A
B
4000
4500
2500
1000
500
0
C
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
3500
3000
2000
1500
-50
C
OSS
C
RSS
C
ISS
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
C
DS
+ C
GD
V
GS
= 0V, f = 1MHz
3
6
9
12
15
g
f
0
-10
-20
-30
-40
-50
I
D
, DRAIN CURRENT (A)
25
o
C
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
100
10
1
0.10.3
0.5
0.7
0.9
1.1
1.3
1.5
1.7
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
I
S
,
25
o
C
150
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0
-5
-10
-15
-20
V
G
,
0
20
80
140
160
180
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
120
100
60
40
V
DS
= -20V
I
D
= -25A
V
DS
= -80V
V
DS
= -50V
IRFP9150
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