參數(shù)資料
型號(hào): IRFP9140N
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
中文描述: 功率MOSFET(減振鋼板基本\u003d- 100V的,的Rds(on)\u003d 0.117ohm,身份證\u003d- 23A條)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 142K
代理商: IRFP9140N
IRFP9140N
HEXFET
Power MOSFET
PRELIMINARY
PD - 9.1492A
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercial-
industrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
V
DSS
= -100V
R
DS(on)
= 0.117
I
D
= -23A
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
P-Channel
l
Fast Switching
l
Fully Avalanche Rated
Description
TO-247AC
Parameter
Max.
-23
-16
-76
140
0.91
± 20
430
-11
14
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.24
–––
Max.
1.1
–––
40
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
3/16/98
S
D
G
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