參數(shù)資料
型號(hào)： IRFP350
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
中文描述： 16 A, 400 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 333K
代理商： IRFP350
IRFP350LC
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 16A, V
GS
= 0V
T
J
= 25°C, I
F
= 16A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
440
4.1
1.6
660
6.2
V
ns
μC
V
DD
= 25V, starting T
J
= 25°C, L = 2.7mH
R
G
= 25
, I
AS
= 16A. (See Figure 12)
I
SD
≤
16A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
400
–––
–––
0.49
–––
–––
2.0
–––
8.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
–––
54
–––
33
–––
35
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 9.6A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 9.6A
V
DS
= 400V, V
GS
= 0V
V
DS
= 320V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 16A
V
DS
= 320V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 200V
I
D
= 16A
R
G
= 6.2
R
D
= 12
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
–––
0.30
4.0
–––
25
250
100
-100
76
20
37
–––
–––
–––
–––
V
V/°C
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
2200
390
31
–––
–––
–––
pF
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
–––
64
–––
–––
16
A
nH
L
D
Internal Drain Inductance
–––
5.0
–––
L
S
Internal Source Inductance
–––
13
–––
I
DSS
Drain-to-Source Leakage Current
I
GSS
ns
μA
nA
Next Data Sheet
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IRFP350LCPBF 功能描述:MOSFET N-Chan 400V 16 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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