參數(shù)資料
型號： IRFP2907
廠商： International Rectifier
英文描述： HEXFET Power MOSFET Die in Wafer Form
中文描述： HEXFET功率MOSFET芯片晶圓形式
文件頁數(shù)： 1/1頁
文件大小： 18K
代理商： IRFP2907
Parameter
V
(BR)DSS
R
DS(on)***
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Mechanical Data
Description
Min
75V
–––
2.0
–––
–––
Typ.
–––
2.5m
–––
–––
–––
Max
–––
4.5m
4.0V
20μA
± 200nA
Test Conditions
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 110A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 75V, V
GS
= 0V, T
J
= 25°C
V
GS
= ±20V
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
Storage Temperature Range
-55°C to 175°C Max.
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Cr-NiV-Ag ( 1kA°-2kA°-5kA° )
100% Al (0.008 mm)
.257" x .360" [ 6.53 mm x 9.14 mm ]
150 mm, with 100 flat
0.254 mm ± 0.025 mm
01-5403
0.107 mm
0.51 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
IRFP2907
Recommended Die Attach Conditions:
Reference Packaged Part
Die Outline
75V
R
DS(on)
= 2.5m
(
typ.)
6" Wafer
10/4/00
Electrical Characteristics *
IRFC2907B
HEXFET
Power MOSFET Die in Wafer Form
S
D
G
www.irf.com
1
GATE
SOURCE
SOURCE
6.53
[.257]
9.14
[.360]
0.508
[.020]
0.508
[.020]
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III
< 1.270 TOLERANCE = + /- 0.102
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
LENGTH
OVERALL DIE:
WIDTH
&
NOTES:
2. CONTROLLING DIMENSION: [INCH].
3. LETTER DESIGNATION:
S = SOURCE
G = GATE
4. DIMENSIONAL TOLERANCES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
< 0.635 TOLERANCE = + /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE = + /- 0.025
> [.0250] TOLERANCE = + /- [.0010]
IS = CURRENTSENSE
SK = SOURCE KELVIN
BONDING PADS:
WIDTH
LENGTH
&
E = EMITTER
* Electrical characteristics are reported for the reference packaged part (see above) and can not be guaranteed in
die sales form. Variations in customer packaging materials, dimensions and processes may affect parametric performance.
** Contact factory for these product forms.
***The typical R
DS(on)
is an estimated value for the bare die, actual results will depend on customer packaging materials and
dimensions.
l
100% Tested at Probe
l
Available in Tape and Reel, Chip Pack,
Sawn on Film and Gel Pack**
l
Ultra Low On-Resistance
PD - 93777
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP2907 制造商:International Rectifier 功能描述:MOSFET N TO-247
IRFP2907HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 80V 209A 3-Pin(3+Tab) TO-247AC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 80V 209A 3PIN TO-247AC - Rail/Tube
IRFP2907PBF 功能描述:MOSFET 75V 1 N-CH HEXFET 4.5mOhms 410nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP2907Z 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET
IRFP2907ZPBF 功能描述:MOSFET MOSFT 75V 170A 4.5mOhm 180nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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