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參數(shù)資料
| 型號： | IRFP17N50LS |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 500V及的Rds（on）典型.\u003d 0.28ohm，身份證\u003d 16A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | IRFP17N50LS |
IRFP17N50LS
11/28/01
www.irf.com
1
SMPS MOSFET
HEXFET
Power MOSFET
Parameter
Max.
16
11
64
220
1.8
± 30
13
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Mounting Torque, 6-32 or M3 screw
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°C
Absolute Maximum Ratings
Benefits
Low Gate Charge Qg results in Simple Drive Requirement
Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
Fully Characterized Capacitance and Avalanche Voltage
and Current
Low Trr and Soft Diode Recovery
High Performance Optimised Anti-parallel Diode
Applications
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High Speed Power Switching
ZVS and High Frequency Circuit
PWM Inverters
lbft.in(N.m)
10
Typical SMPS Topologies
Bridge Converters
All Zero Voltage Switching
S
D
G
Diode Characteristics
Symbol
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
A
Parameter
Min. Typ. Max. Units
Conditions
16
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 16A, V
GS
= 0V
T
J
= 25
°
C
T
J
= 125
°
C
T
J
= 25
°
C
T
J
= 125
°
C
–––
–––
64
–––
–––
–––
–––
–––
–––
–––
–––
–––
170
220
470
810 1210
7.3
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.5
250
330
710
V
I
F
= 16A
di/dt = 100A/μs
I
RRM
t
on
Reverse Recovery Current
Forward Turn-On Time
11
A
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
ns
nC
PD - 94351
SMD-247
V
DSS
500V
R
DS(on)
typ.
0.28
T
rr
170ns
I
D
16A
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