- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379238 > IRFNL210B (FAIRCHILD SEMICONDUCTOR CORP) 200V N-Channel MOSFET PDF資料下載
參數(shù)資料
| 型號： | IRFNL210B |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 1000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | TO-92L, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 680K |
| 代理商： | IRFNL210B |
2002 Fairchild Semiconductor Corporation
Rev. A, December 2002
I
IRFNL210B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
1.0A, 200V, R
DS(on)
= 1.5
@V
GS
= 10 V
Low gate charge ( typical 7.2 nC)
Low Crss ( typical 6.8 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFNL210B
200
1.0
0.93
10
±
30
40
3.3
0.031
5.0
3.1
0.025
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JL
Parameter
Typ
--
Max
40
Units
°C
/
W
Thermal Resistance, Junction-to-Lead
! "
!
!
S
!
"
"
D
G
TO-92L
IRFNL Series
G
S
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFP140A | Advanced Power MOSFET |
| IRFP150 | Advanced Power MOSFET |
| IRFP150 | HIGH VOLTAGE POWER MOSFET DIE |
| IRFP150 | Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) |
| IRFP150N | Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFNL210BTA | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| IRFNL210BTA_FP001 | 功能描述:MOSFET 200V N-CHAN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP 048NPBF | 制造商:International Rectifier 功能描述:Bulk |
| IRFP 054PBF | 制造商:Vishay BCcomponents 功能描述: |
| IRFP 064NPBF | 制造商:International Rectifier 功能描述:Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。