- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄360943 > IRFN9140SMD P-Channel Power MOSFET(Vdss:-100V,Id(cont):-14A,Rds(on):0.020Ω)(P溝道功率MOS場效應(yīng)管(Vdss:-100V,Id(cont):-14A,Rds(on):0.020Ω)) PDF資料下載
參數(shù)資料
| 型號： | IRFN9140SMD |
| 英文描述： | P-Channel Power MOSFET(Vdss:-100V,Id(cont):-14A,Rds(on):0.020Ω)(P溝道功率MOS場效應(yīng)管(Vdss:-100V,Id(cont):-14A,Rds(on):0.020Ω)) |
| 中文描述： | P溝道功率MOSFET（減振鋼板基本：- 100V的，身份證（續(xù)）：- 14A條的Rds（on）：0.020Ω）性（P溝道功率馬鞍山場效應(yīng)管（減振鋼板基本：- 100V的，身份證（續(xù)）：- 14A條，的RDS（on）：0.020Ω）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | IRFN9140SMD |
IRFN9140SMD
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= –1mA
V
GS
= –10V
V
GS
= –10V
V
DS
= V
GS
V
DS
3
–15V
V
GS
= 0
I
D
= –1mA
I
D
= –9A
I
D
= –14A
I
D
= –250
m
A
I
DS
= –9A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= –20V
V
GS
= 20V
V
GS
= 0
V
DS
= –25V
f = 1MHz
V
GS
= –10V
V
DS
= 0.5BV
DSS
I
D
= –14A
V
DS
= 0.5BV
DSS
I
D
= –14A
V
DD
= –50V
I
D
= –14A
R
G
= 9.1
W
I
S
= –14A
V
GS
= 0
I
F
= –14A
d
i
/ d
t
￡
–100A/
m
s V
DD
￡
–50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn–On Time
–100
–0.087
0.20
0.22
–4
–2
6.2
–25
–250
–100
100
1400
600
200
31
60
3.7
7
13
35.2
35
85
85
65
–14
–56
–4.2
280
3.6
negligible
0.8
2.8
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFN9140 | POWER MOSFET N-CHANNEL(BVdss=-100V, Rds(on)=0.20ohm, Id=-18A) |
| IRFN9140SMD | ER 06 20 P/C |
| IRFN9240SMD | P-Channel Power MOSFET(Vdss:-200V,Id(cont):-8A,Rds(on):0.051Ω)(P溝道功率MOS場效應(yīng)管(Vdss:-200V,Id(cont):-8A,Rds(on):0.051Ω)) |
| IRFN9240 | POWER MOSFET N-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-11A) |
| IRFN9240SMD | P-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFN9240 | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 200V 11A 3-Pin SMD-1 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 200V 11A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:Single P-Channel 200 V 125 W 60 nC Hexfet Power Mosfet Surface Mount - SMD-1 |
| IRFN9240SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P-CHANNEL POWER MOSFET |
| IRFNG40 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 1KV 3.9A 3SMD-1 - Bulk |
| IRFNG40SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 1KV 3.9A 3SMD-1 - Bulk |
| IRFNG40SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 1KV 3.9A 3SMD-1 - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。