參數(shù)資料
型號： IRFN440
廠商： International Rectifier
英文描述： POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=8.0A)
中文描述： 功率MOSFET N溝道（BVdss \u003d 500V及的Rds（on）\u003d 0.85ohm，身份證\u003d 8.0A）
文件頁數(shù)： 2/6頁
文件大?。?/td> 213K
代理商： IRFN440
Thermal Resistance
Parameter
Junction-to-Case
Min. Typ. Max. Units
—
—
Test Conditions
RthJC
1.0
RthJ-PCB
Junction-to-PC Board
—
TBD
—
K/W
Soldered to a copper clad PC board
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
Test Conditions
8.0
32
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.5
700
8.9
V
ns
μ
C
T
j
= 25°C, IS = 8.0A, VGS = 0V
Tj = 25°C, IF = 8.0A, di/dt
≤
100A/
μ
s
VDD
≤
50V
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min.
500
—
Typ. Max. Units
—
—
0.78
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
2.0
4.7
—
—
—
—
—
—
—
—
0.85
0.95
4.0
—
25
250
VGS = 10V, ID = 5.0A
VGS = 10V, ID = 8.0A
VDS = VGS, ID = 250
μ
A
VDS > 15V, IDS = 5.0A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 8.0A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 250V, ID = 8.0A,
RG = 9.1
,
VGS = 10V
V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
68.5
12.5
42.4
21
73
72
51
—
27.3
2.0
11.1
—
—
—
—
—
see figure 10
Modified MOSFET
symbol showing the
internal inductances.
LS
Internal Source Inductance
—
6.5
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1300
310
120
—
—
—
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
IRFN440 Device
μ
A
nC
pF
nH
ns
Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
nA
A
Next Data Sheet
Index
Previous Datasheet
To Order
相關(guān)PDF資料
PDF描述
IRFN450 POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A)
IRFNG40 POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=3.5ohm, Id=3.9A)
IRFNG50 POWER MOSFET N-CHANNEL(BVdss=1000V, Rds(on)=2.0ohm, Id=5.5A)
IRFP15N60L HEXFET Power MOSFET
IRFP31N50L Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFN450 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 12A 3SMD-1 - Bulk
IRFN5210 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P-CHANNEL POWER MOSFET
IRFN9130SMD05 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-Channel
IRFN9140 制造商:International Rectifier 功能描述:EXFET, Hi-Rel, -100v, -18A, .32 Ohohms, SMD-1 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 18A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:P CHANNEL MOSFET, -100V, 18A, SMD-1; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V ;RoHS Compliant: No
IRFN9140SMD 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P-CHANNEL POWER MOSFET
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*