- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄360943 > IRFN340SMD (SEMELAB LTD) N-CHANNEL POWER MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | IRFN340SMD |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-CHANNEL POWER MOSFET |
| 中文描述： | 10 A, 400 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | HERMETIC SEALED, SMD1, 3 PIN |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | IRFN340SMD |
IRFN340SMD
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 6A
I
D
= 10A
I
D
= 250
m
A
I
DS
= 6A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 10A
V
DD
= 200V
R
G
= 9.1
W
I
D
= 10A
V
GS
= 10V
I
S
= 10A
V
GS
= 0
I
F
= 10A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tj= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
4
Gate Threshold Voltage
Forward Transconductance
4
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1
Gate – Source Charge
1
Gate – Drain (“Miller”) Charge
1
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
4
Reverse Recovery Time
4
Reverse Recovery Charge
4
Forward Turn–On Time
400
0.46
0.55
0.70
4
2
4.9
25
250
100
–100
1400
3500
2300
32
65
2.2
13.8
10.0
40.5
2.5
92
79
58
10
40
1.5
600
5.6
Negligible
2.0
6.5
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
(from centre of drain pad to die)
Internal Source Inductance
(from centre of source pad to end of source bond wire)
PACKAGE CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFN9140SMD | P-Channel Power MOSFET(Vdss:-100V,Id(cont):-14A,Rds(on):0.020Ω)(P溝道功率MOS場(chǎng)效應(yīng)管(Vdss:-100V,Id(cont):-14A,Rds(on):0.020Ω)) |
| IRFN9140 | POWER MOSFET N-CHANNEL(BVdss=-100V, Rds(on)=0.20ohm, Id=-18A) |
| IRFN9140SMD | ER 06 20 P/C |
| IRFN9240SMD | P-Channel Power MOSFET(Vdss:-200V,Id(cont):-8A,Rds(on):0.051Ω)(P溝道功率MOS場(chǎng)效應(yīng)管(Vdss:-200V,Id(cont):-8A,Rds(on):0.051Ω)) |
| IRFN9240 | POWER MOSFET N-CHANNEL(BVdss=-200V, Rds(on)=0.51ohm, Id=-11A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFN350 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 14A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:hexfet 400V, 14A, 0.315 ohm 制造商:International Rectifier 功能描述:HEXFET, HiRel |
| IRFN3710 | 制造商:IRF 制造商全稱(chēng):International Rectifier 功能描述:TRANSISTOR N-CHANNEL(BVdss=100V, Rds(on)=0.028ohm, Id=45A) |
| IRFN440 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 8A 3SMD-1 - Bulk |
| IRFN450 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 500V 12A 3SMD-1 - Bulk |
| IRFN5210 | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:P-CHANNEL POWER MOSFET |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。