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參數(shù)資料
| 型號(hào)： | IRFN130SMD |
| 英文描述： | N-Channel Power MOSFET(Vdss:100V,Id(cont):11A,Rds(on):0.19Ω)(N溝道功率MOS場(chǎng)效應(yīng)管(Vdss:100V,Id(cont):11A,Rds(on):0.19Ω)) |
| 中文描述： | N溝道功率MOSFET（減振鋼板基本：100V的，身份證（續(xù)）：11A條的Rds（on）：0.19Ω）（不適用馬鞍山溝道功率場(chǎng)效應(yīng)管（減振鋼板基本：100V的，身份證（續(xù)）：11A條的Rds（on） ：0.19Ω）） |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | IRFN130SMD |
IRFN130SMD
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 7/00
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 7A
I
D
= 11A
I
D
= 250
m
A
I
DS
= 7A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 11A
V
DS
= 0.5BV
DSS
I
D
= 11A
V
DD
= 50V
I
D
= 11A
R
G
= 7.5
W
I
S
= 11A
V
GS
= 0
I
S
= 11A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
0.1
0.19
0.22
4
2
3
25
250
100
-100
650
240
44
12.8
28.5
1.0
3.8
6.3
16.6
30
75
40
45
11
43
1.5
300
3
8.7
8.7
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
(from 6mm down source lead to centre of source bond pad)
(from 6mm down drain lead pad to centre of die)
PACKAGE CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFN130SMD | N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
| IRFN140SMD | N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N溝道功率MOS場(chǎng)效應(yīng)管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) |
| IRFN140 | POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A) |
| IRFN140SMD | ER CET 0 |
| IRFN150SMD | N-Channel Power MOSFET(Vdss:100V,Id(cont):19A,Rds(on):0.070Ω)(N溝道功率MOS場(chǎng)效應(yīng)管(Vdss:100V,Id(cont):19A,Rds(on):0.070Ω)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFN130SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel |
| IRFN140 | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 28A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 100V, 28A, SMD-1; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:100V; On Resistance Rds(on):77mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| IRFN140SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
| IRFN150 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 34A 3-Pin SMD-1 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 34A 3SMD-1 - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 100V, 34A, SMD-1; Transistor Polarity:N Channel; Continuous Drain Current Id:34A; Drain Source Voltage Vds:100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| IRFN150SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:N-CHANNEL POWER MOSFET |
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