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| 型號(hào)： | IRFM540 |
| 英文描述： | N-Channel |
| 中文描述： | N溝道 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 34K |
| 代理商： | IRFM540 |
IRFM540
Document Number 2613
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukSemelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 12A
I
D
= 18A
I
D
= 250
m
A
I
DS
= 12A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 18A
V
DS
= 0.5BV
DSS
I
D
= 18A
V
DD
= 50V
I
D
= 18A
R
G
= 9.1
W
I
S
= 18A
V
GS
= 0
I
S
= 18A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
100
0.1
0.092
0.11
4
2
9.1
25
250
100
-100
1660
550
120
30
59
2.4
12
12
30.7
21
145
64
105
18
73
1.5
400
2.4
TBA
TBA
V
V/°C
W
V
S
(
(
W
)
m
A
nA
pF
nC
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
(from 6mm down source lead to centre of source bond pad)
(from 6mm down drain lead pad to centre of die)
PACKAGE CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFM9130 | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-254AA |
| IRFM9230 | TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 6.5A I(D) | TO-254AA |
| IRFM050 | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | TO-254AA |
| IRFM9140D | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 18A I(D) | TO-254VAR |
| 2N7236 | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFM7150 | 制造商:International Rectifier 功能描述:HEXFET, HI-REL - Bulk |
| IRFM8240 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:POWER MOSFET THRU-HOLE (TO-254AA) |
| IRFM9130 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 11A I(D) | TO-254AA |
| IRFM9140 | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 100V 18A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 18A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:P CH MOSFET, -100V, 18A, TO-254AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-18A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V ;RoHS Compliant: No |
| IRFM9140D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 18A I(D) | TO-254VAR |
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