參數(shù)資料
型號(hào)： IRFM450
廠商： SEMELAB LTD
元件分類(lèi)： JFETs
英文描述： 2mm TERMINAL STRIP
中文描述： 12 A, 500 V, 0.515 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 15K
代理商： IRFM450
IRFM450
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 10/95
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
I
D
= 1mA
I
D
= 8A
I
D
= 12A
I
D
= 250
μ
A
I
DS
= 8A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 12A
V
DS
= 0.5BV
DSS
V
DD
= 250V
I
D
= 12A
R
G
= 2.35
I
S
= 12A
V
GS
= 0
I
F
= 12A
d
i
/ d
t
≤
100A/
μ
s V
DD
≤
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tamb= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
2
Gate Threshold Voltage
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn–On Time
500
0.68
0.415
0.515
4
2
6.5
25
250
100
–100
2700
600
240
12
55
5
27
120
19
70
35
190
170
130
12
48
1.7
1600
14
Negligible
8.7
8.7
V
V/°C
V
(
)
S
(
μ
A
nA
pF
nC
ns
A
V
ns
μ
C
nH
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
1) Repetitive Rating – Pulse width limited by Maximum
Junction Temperature
2) Pulse Test: Pulse Width
≤
300
μ
s,
δ ≤
2%
*
I
S
Current limited by pin diameter.
Notes
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
Internal Source Inductance
Measured from 6mm down source lead to source bond pad
PACKAGE CHARACTERISTICS
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