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參數(shù)資料
| 型號(hào)： | IRFM350 |
| 英文描述： | N-Channel Power MOSFET(Vdss:400V,Id(cont):14A,Rds(on):0.315Ω)(N溝道功率MOS場(chǎng)效應(yīng)管(Vdss:400V,Id(cont):14A,Rds(on):0.315Ω)) |
| 中文描述： | N溝道功率MOSFET（減振鋼板基本：為400V，ID已（續(xù)）：14A條的Rds（on）：0.315Ω）（不適用馬鞍山溝道功率場(chǎng)效應(yīng)管（減振鋼板基本：為400V，ID已（續(xù)）：14A條的Rds（on） ：0.315Ω）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 20K |
| 代理商： | IRFM350 |
Prelim. 05/00
IRFM350
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25
°
C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 9A
I
D
= 14A
I
D
= 250
m
A
I
DS
= 9A
V
DS
= 0.8BV
DSS
T
J
= 125
°
C
V
GS
= 20V
V
GS
=
–
20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 14A
V
DS
= 0.5BV
DSS
V
DD
= 200V
I
D
= 14A
R
G
= 2.35
W
I
S
= 14A
V
GS
= 0
I
F
= 14A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25
°
C
T
J
= 25
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise stated)
Drain
–
Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain
–
Source On
–
State
Resistance
2
Gate Threshold Voltage
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate
–
Source Leakage
Reverse Gate
–
Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain
–
Case Capacitance
Total Gate Charge
Gate
–
Source Charge
Gate
–
Drain (
“
Miller
”
) Charge
Turn
–
On Delay Time
Rise Time
Turn
–
Off Delay Time
Fall Time
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn
–
On Time
400
0.46
0.315
0.415
4
2
6
25
250
100
–
100
2600
660
250
12
52
5
25
110
18
65
35
190
170
130
14
56
1.7
1200
11
Negligible
8.7
8.7
V
V/
°
C
W
V
S
(
(
W
)
m
A
nA
pF
nC
ns
A
V
ns
m
C
nH
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
C
DC
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
1) Repetitive Rating
–
Pulse width limited by Maximum Junction Temperature
2) Pulse Test: Pulse Width
￡
300
m
s,
d ￡
2%.
Notes
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE CHARACTERISTICS
Internal Drain Inductance
Measured from 6mm down drain lead to centre of die
Internal Source Inductance
Measured from 6mm down source lead to source bond pad
PACKAGE CHARACTERISTICS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFM350 | N-CHANNEL POWER MOSFET |
| IRFM360U | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 23A I(D) | TO-254VAR |
| IRFM340D | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-254VAR |
| IRFM340U | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 10A I(D) | TO-254VAR |
| IRFM350D | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-254VAR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFM350D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-254VAR |
| IRFM350U | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 14A I(D) | TO-254VAR |
| IRFM360 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 400V 23A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 23A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET, 400V, 35A, TO-254AA; Transistor Polarity:N Channel; Continuous Drain Current Id:35A; Drain Source Voltage Vds:400V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3;RoHS Compliant: No |
| IRFM360B | 制造商:International Rectifier 功能描述: |
| IRFM360D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 23A I(D) | TO-254VAR |
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