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參數(shù)資料
| 型號(hào)： | IRFM014AD84Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 2.8 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 260K |
| 代理商： | IRFM014AD84Z |
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
Fig 6. Gate Charge vs. Gate-Source Voltage
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 4. Source-Drain Diode Forward Voltage
Fig 3. On-Resistance vs. Drain Current
IRFM014A
2
4
6
8
10
-1
10
0
10
1
25
oC
150
oC
- 55
oC
@ Notes :
1. V
GS
= 0 V
2. V
DS
= 30 V
3. 250
s Pulse Test
I
D
,
Drain
Current
[A]
V
GS
, Gate-Source Voltage [V]
0
10
20
30
40
0.00
0.05
0.10
0.15
0.20
@ Note : T
J
= 25
oC
V
GS
= 20 V
V
GS
= 10 V
R
DS(on)
,
[
]
Drain-Source
On-Resistance
I
D
, Drain Current [A]
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
10
-1
10
0
10
1
150
oC
25
oC
@ Notes :
1. V
GS
= 0 V
2. 250
s Pulse Test
I
DR
,
Reverse
Drain
Current
[A]
V
SD
, Source-Drain Voltage [V]
10
0
10
1
0
200
400
600
C
iss= Cgs+ Cgd ( Cds= shorted )
C
oss
= C
ds
+ C
gd
C
rss= Cgd
@ Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
Capacitance
[pF]
V
DS
, Drain-Source Voltage [V]
0
3
6
9
12
15
0
5
10
V
DS = 48 V
V
DS = 30 V
V
DS
= 12 V
@ Notes : I
D = 10.0 A
V
GS
,
Gate-Source
Voltage
[V]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
10
0
10
1
@ Notes :
1. 250
s Pulse Test
2. T
A
= 25
oC
V
GS
Top :
15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
Bottom : 4.5 V
I
D
,
Drain
Current
[A]
V
DS
, Drain-Source Voltage [V]
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|---|---|
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