參數(shù)資料
型號(hào)： IRFL9014
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.8A)
中文描述： 功率MOSFET（減振鋼板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份證\u003d- 1.8A）
文件頁數(shù)： 2/8頁
文件大?。?/td> 222K
代理商： IRFL9014
IRFL9014
2
www.irf.com
R
DS(on)
V
GS(th)
g
fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
–––
-2.0
1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
63
9.6
0.50
-4.0
–––
-100
-500
-100
100
12
3.8
5.1
–––
–––
–––
V
S
V
GS
= -10V, I
D
= 1.1A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= -25V, I
D
= 1.1A
V
DS
= -60V, V
GS
= 0V
V
DS
= -48V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
=-6.7A
V
DS
=-48V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -30V
I
D
= -6.7A
R
G
= 24
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
f
Fall Time ––– 31 ––– R
D
= 4.0
,
See Fig. 10
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
nC
ns
nH
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
270
170
31
–––
–––
–––
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
-6.7A, di/dt
≤90
A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Notes:
V
DD=
-25V, starting T
J
= 25°C, L =50 mH
R
G
= 25
, I
AS
= -1.8A. (See Figure 12)
Pulse width
≤
300μs; duty cycle
≤
2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
T
J
= 25°C, I
F
=-6.7A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
t
on
–––
–––
––– 0.096 0.19
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
–––
80
-5.5
160
V
ns
μC
–––
–––
–––
–––
-14
-1.8
A
Between lead, 6mm(0.25in)
from package and center
of die contact.
L
S
Internal Source Inductance
Internal Drain Inductance
L
D
––– 4.0 –––
––– 6.0 –––
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
––– -0.059 –––
V/°C
Reference to 25°C, I
D
= 1mA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-60
–––
–––
V
V
GS
= 0V, I
D
= 250μA
Parameter
Min. Typ. Max. Units
Conditions
Source-Drain Ratings and Characteristics
S
D
G
S
D
G
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IRFL9014PBF 功能描述:MOSFET P-Chan 60V 1.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFL9014PBF 制造商:Vishay Siliconix 功能描述:P CH MOSFET -60V 1.8A SOT-223
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IRFL9014TRPBF 功能描述:MOSFET P-Chan 60V 1.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFL9110 功能描述:MOSFET P-Chan 100V 1.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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