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參數(shù)資料
| 型號： | IRFL4310 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 100V的，的Rds（on）\u003d 0.20ohm，身份證\u003d 1.6A的） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 313K |
| 代理商： | IRFL4310 |
IRFL4310
2
www.irf.com
Parameter
Min. Typ. Max. Units
100
0.12
Conditions
V
(BR)DSS
D
V
(BR)DSS
/
D
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
0.20
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 1.6A
V/°C
W
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
2.0
1.5
17
2.1
7.8
7.8
18
34
4.0
25
250
100
-100
25
3.1
12
V
S
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 50V, I
D
= 0.80 A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 1.6A
V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 50V
I
D
= 1.6A
R
G
= 6.2
W
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t
f
Fall Time 20 R
D
= 31
W,
See Fig. 10
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
nC
ns
330
92
54
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
￡
1.6A, di/dt
￡
340A/μs, V
DD
￡
V
(BR)DSS
,
T
J
￡
150°C
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 9.2 mH
R
G
= 25
W
, I
AS
= 3.2A. (See Figure 12)
Pulse width
￡
300μs; duty cycle
￡
2%.
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 1.6A, V
GS
= 0V
T
J
= 25°C, I
F
= 1.6A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
72
210
1.3
110
320
V
ns
nC
13
0.91
A
Source-Drain Ratings and Characteristics
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| IRFL4310PBF | 功能描述:MOSFET 100V 1 N-CH HEXFET PWR MOSFET200mOhms RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFL4310PBF | 制造商:International Rectifier 功能描述:MOSFET N CH 100V 1.6A SOT-223 制造商:International Rectifier 功能描述:MOSFET, N CH, 100V, 1.6A, SOT-223 |
| IRFL4310PBF | 制造商:International Rectifier 功能描述:MOSFET |
| IRFL4310TR | 功能描述:MOSFET N-CH 100V 1.6A SOT223 RoHS:否 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRFL4310TRPBF | 功能描述:MOSFET MOSFT 100V 1.6A 200mOhm 17nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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