參數(shù)資料
型號(hào): IRFI9Z34N
廠商: International Rectifier
英文描述: P Channel Straight Lead HEXFET Power MOSFET(P溝道HEXFET功率MOS場(chǎng)效應(yīng)管)
中文描述: P通道直鉛HEXFET功率MOSFET的性(P溝道的HEXFET功率馬鞍山場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 120K
代理商: IRFI9Z34N
IRFI9Z34N
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Q
G
Q
GS
Q
GD
V
G
Charge
-10V
D.U.T.
V
DS
+
I
D
I
G
-3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
-
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
IAS
0.01
t
p
D.U.T
L
VDS
VDD
DRIVER
A
15V
-20V
0
100
200
300
400
500
25
50
75
100
125
150
175
E
A
A
Starting T , Junction Temperature (°C)
I
TOP -4.2A
-7.2A
BOTTOM -10A
D
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