參數(shù)資料
型號(hào)： IRFI830
廠商： Fairchild Semiconductor Corporation
英文描述： 500V N-Channel MOSFET
中文描述： 500V N溝道MOSFET
文件頁(yè)數(shù)： 1/9頁(yè)
文件大?。?/td> 677K
代理商： IRFI830
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
I
IRFW830B / IRFI830B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
4.5A, 500V, R
DS(on)
= 1.5
@V
GS
= 10 V
Low gate charge ( typical 27 nC)
Low Crss ( typical 17 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFW830B / IRFI830B
500
4.5
2.9
18
±
30
270
4.5
7.3
5.5
3.13
73
0.58
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
stg
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
--
--
Max
1.71
40
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
●
●
●
●
●
▲
!
!
S
!
!
!
D
G
D
2
-PAK
IRFW Series
I
2
-PAK
IRFI Series
G
S
D
G
S
D
相關(guān)PDF資料
PDF描述
IRFW830B 500V N-Channel MOSFET
IRFI830B 500V N-Channel MOSFET
IRFM014A N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為60V，導(dǎo)通電阻為0.14Ω，漏電流為2.8A）)
IRFM210A N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為200V，導(dǎo)通電阻為1.5Ω，漏電流為0.77A）)
IRFN214B 250V N-Channel MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFI830A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-262AA
IRFI830B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
IRFI830BTU 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFI830G 功能描述:MOSFET N-Chan 500V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFI830GPBF 功能描述:MOSFET N-Chan 500V 3.1 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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