參數(shù)資料
型號(hào): IRFI644G
廠商: VISHAY SILICONIX
元件分類: JFETs
英文描述: 7.9 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, TO-220, FULLPAK-3
文件頁數(shù): 7/8頁
文件大?。?/td> 1398K
代理商: IRFI644G
Document Number: 91151
www.vishay.com
S-81290-Rev. A, 16-Jun-08
7
IRFI644G, SiHFI644G
Vishay Siliconix
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91151.
P.W.
Period
dI/dt
Diode recovery
dV/dt
Ripple
≤ 5 %
Body diode forward drop
Re-applied
voltage
Reverse
recovery
current
Body diode forward
current
VGS = 10 V*
VDD
ISD
Driver gate drive
D.U.T. ISD waveform
D.U.T. VDS waveform
Inductor current
D =
P.W.
Period
+
-
+
-
* VGS = 5 V for logic level devices
Peak Diode Recovery dV/dt Test Circuit
VDD
dV/dt controlled by R
G
Driver same type as D.U.T.
ISD controlled by duty factor "D"
D.U.T. - device under test
D.U.T
Circuit layout considerations
Low stray inductance
Ground plane
Low leakage inductance
current transformer
RG
相關(guān)PDF資料
PDF描述
IRFL214 790 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
IRFM014AD84Z 2.8 A, 60 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
IRFP054PBF 70 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
IRFP140 31 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
IRFP152 34 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFI644GPBF 功能描述:MOSFET N-Chan 250V 7.9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFI650B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET
IRFI650BTU_FP001 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFI654B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET
IRFI654BTU_FP001 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube