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參數(shù)資料
| 型號(hào)： | IRFF420 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1.6A, 500V, 3.000 Ohm, N-Channel Power MOSFET(1.6A, 500V, 3.000 Ω, N溝道功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 1.6 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁(yè)數(shù)： | 5/7頁(yè) |
| 文件大?。?/td> | 326K |
| 代理商： | IRFF420 |
5
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
(Continued)
1.25
1.05
0.85
0
T
J
, JUNCTION TEMPERATURE (
o
C)
160
N
1.15
0.95
0.75
-40
40
80
120
B
I
D
= 250
μ
A
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
1000
800
600
400
200
0
V
GS
= 0V, f = 1MHz
C
ISS
= C
GS
+ C
GD
C
RSS
= C
GD
C
OSS
≈
C
DS
+ C
GD
10
20
30
40
50
C
RSS
C
OSS
C
ISS
I
D
, DRAIN CURRENT (A)
1
2
3
4
0
5
5
4
3
0
2
g
f
,
80
μ
s PULSE TEST
1
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -50
o
C
I
S
,
V
SD
, SOURCE TO DRAIN VOLTAGE (V)
10
1
0
1
3
4
T
J
= 25
o
C
T
J
= 25
o
C
T
J
= 150
o
C
T
J
= 150
o
C
2
100
80
μ
s PULSE TEST
Q
g(TOT)
, TOTAL GATE CHARGE (nC)
4
8
12
16
0
20
20
15
0
10
V
G
,
V
DS
= 100V
V
DS
= 250V
V
DS
= 400V
5
I
D
= 1.6A
IRFF420
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF420R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 1.6A I(D) | TO-205AF |
| IRFF420U | 制造商:Harris Corporation 功能描述: |
| IRFF421 | 制造商:International Rectifier 功能描述: |
| IRFF421R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 1.6A I(D) | TO-205AF |
| IRFF422 | 制造商:International Rectifier 功能描述: |
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